High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal-organic chemical-vapor deposition

W. Zhang, H. Lim, M. Taguchi, S. Tsao, B. Movaghar, M. Razeghi

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

We report a high-detectivity InAs quantum-dot infrared photodetector. The InAs quantum dots were grown by self-assembly on InP substrates via low-pressure metal-organic chemical-vapor deposition. Highly uniform quantum dots with a density of 4× 1010 cm2 were grown on a GaAsInP matrix. Photoresponse was observed at temperatures up to 160 K with a peak of 6.4 μm and cutoff of 6.6 μm. Very low dark currents and noise currents were obtained by inserting Al0.48 In0.52 As current blocking layers. The background-limited performance temperature was 100 K. A detectivity of 1.0× 1010 cm Hz12 W was obtained at 77 K with a bias of -1.1 V.

Original languageEnglish (US)
Article number191103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number19
DOIs
StatePublished - May 9 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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