A high detectivity InGaAs/InGaP middle-wavelength infrared quantum dot infrared photodetector is described. The growth of the InGaAs quantum dots is achieved by self-assembly on an InGaP matrix with the help of low pressure metalorganic chemical vapor deposition. Photoresponse is observed at temperatures greater than 200 K, and the photoresponse has a peak wavelength of 4.7 μm and cutoff wavelength of 5.2 μm. It is observed that the super low dark current in the photodetector results in a background limited performance temperature of 140K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)