High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

J. Jiang*, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G. J. Brown, M. Z. Tidrow

*Corresponding author for this work

Research output: Contribution to journalArticle

90 Scopus citations

Abstract

A high detectivity InGaAs/InGaP middle-wavelength infrared quantum dot infrared photodetector is described. The growth of the InGaAs quantum dots is achieved by self-assembly on an InGaP matrix with the help of low pressure metalorganic chemical vapor deposition. Photoresponse is observed at temperatures greater than 200 K, and the photoresponse has a peak wavelength of 4.7 μm and cutoff wavelength of 5.2 μm. It is observed that the super low dark current in the photodetector results in a background limited performance temperature of 140K.

Original languageEnglish (US)
Pages (from-to)2166-2168
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
StatePublished - Mar 22 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Jiang, J., Tsao, S., O'Sullivan, T., Zhang, W., Lim, H., Sills, T., Mi, K., Razeghi, M., Brown, G. J., & Tidrow, M. Z. (2004). High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition. Applied Physics Letters, 84(12), 2166-2168. https://doi.org/10.1063/1.1688982