High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

J. Jiang*, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G. J. Brown, M. Z. Tidrow

*Corresponding author for this work

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Physics & Astronomy