High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

J. Szafraniec; S. Tsao; W. Zhang; H. Lim; M. Taguchi; A. A. Quivy; B. Movaghar; M. Razeghi

doi:10.1063/1.2188056

High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

J. Szafraniec, S. Tsao, W. Zhang, H. Lim, M. Taguchi, A. A. Quivy, B. Movaghar, M. Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 AW and low dark-current noise of the device, a specific peak detectivity of 1.1× 10 ¹² cm Hz ¹² W ^-1 was achieved at -0.9 V bias.

Original language	English (US)
Article number	121102
Journal	Applied Physics Letters
Volume	88
Issue number	12
DOIs	https://doi.org/10.1063/1.2188056
State	Published - Mar 20 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition",

abstract = "A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 AW and low dark-current noise of the device, a specific peak detectivity of 1.1× 10 12 cm Hz 12 W -1 was achieved at -0.9 V bias.",

author = "J. Szafraniec and S. Tsao and W. Zhang and H. Lim and M. Taguchi and Quivy, {A. A.} and B. Movaghar and M. Razeghi",

note = "Funding Information: One of the authors (S.T.) would like to acknowledge NASA for its fellowship support.",

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T1 - High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

AU - Szafraniec, J.

AU - Tsao, S.

AU - Zhang, W.

AU - Lim, H.

AU - Taguchi, M.

AU - Quivy, A. A.

AU - Movaghar, B.

AU - Razeghi, M.

N1 - Funding Information: One of the authors (S.T.) would like to acknowledge NASA for its fellowship support.

PY - 2006/3/20

Y1 - 2006/3/20

N2 - A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 AW and low dark-current noise of the device, a specific peak detectivity of 1.1× 10 12 cm Hz 12 W -1 was achieved at -0.9 V bias.

AB - A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 AW and low dark-current noise of the device, a specific peak detectivity of 1.1× 10 12 cm Hz 12 W -1 was achieved at -0.9 V bias.

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High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

Abstract

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