High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

J. Szafraniec, S. Tsao, W. Zhang, H. Lim, M. Taguchi, A. A. Quivy, B. Movaghar, M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 AW and low dark-current noise of the device, a specific peak detectivity of 1.1× 10 12 cm Hz 12 W -1 was achieved at -0.9 V bias.

Original languageEnglish (US)
Article number121102
JournalApplied Physics Letters
Volume88
Issue number12
DOIs
StatePublished - Mar 20 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition'. Together they form a unique fingerprint.

Cite this