A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77 K was measured to be around 4.7 μm with a cutoff at 5.5 μm. Due to the high peak responsivity of 1.2 AW and low dark-current noise of the device, a specific peak detectivity of 1.1× 10 12 cm Hz 12 W -1 was achieved at -0.9 V bias.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)