Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R 0A of ∼7 Ω cm 2 and a Johnson-limited detectivity of 4.03 × 10 10 cm Hz 1/2 W -1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)