High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared

Andrew Hood*, Darin Hoffman, Binh Minh Nguyen, Pierre Yves Delaunay, Erick Michel, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

67 Scopus citations

Abstract

Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R 0A of ∼7 Ω cm 2 and a Johnson-limited detectivity of 4.03 × 10 10 cm Hz 1/2 W -1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.

Original languageEnglish (US)
Article number093506
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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