High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared

Andrew Hood; Darin Hoffman; Binh Minh Nguyen; Pierre Yves Delaunay; Erick Michel; Manijeh Razeghi

doi:10.1063/1.2345020

High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared

Andrew Hood^*, Darin Hoffman, Binh Minh Nguyen, Pierre Yves Delaunay, Erick Michel, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R ₀A of ∼7 Ω cm ² and a Johnson-limited detectivity of 4.03 × 10 ¹⁰ cm Hz ^1/2 W ^-1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.

Original language	English (US)
Article number	093506
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2345020
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2345020

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abstract = "Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R 0A of ∼7 Ω cm 2 and a Johnson-limited detectivity of 4.03 × 10 10 cm Hz 1/2 W -1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.",

author = "Andrew Hood and Darin Hoffman and Nguyen, {Binh Minh} and Delaunay, {Pierre Yves} and Erick Michel and Manijeh Razeghi",

year = "2006",

doi = "10.1063/1.2345020",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared

AU - Hood, Andrew

AU - Hoffman, Darin

AU - Nguyen, Binh Minh

AU - Delaunay, Pierre Yves

AU - Michel, Erick

AU - Razeghi, Manijeh

PY - 2006

Y1 - 2006

N2 - Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R 0A of ∼7 Ω cm 2 and a Johnson-limited detectivity of 4.03 × 10 10 cm Hz 1/2 W -1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.

AB - Type-II InAs/GaSb superlattice photodiodes with a 50% cutoff wavelength ranging from 11 to 13 μm are presented. Optimization of diffusion limited photodiodes provided superlattice structures for improved injection efficiency in direct injection hybrid focal plane array applications. Photodiodes with a cutoff wavelength of 12.9 μm exhibit an R 0A of ∼7 Ω cm 2 and a Johnson-limited detectivity of 4.03 × 10 10 cm Hz 1/2 W -1 operating at 77 K. Quantum efficiency measurements indicate minority carrier diffusion lengths exceeding 3 μm.

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JF - Applied Physics Letters

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High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared

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