Abstract
A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from â̂1 mm × 1 mm to â̂25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.
Original language | English (US) |
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Pages (from-to) | 1643-1649 |
Number of pages | 7 |
Journal | Small |
Volume | 8 |
Issue number | 11 |
DOIs | |
State | Published - Jun 11 2012 |
Keywords
- flexible electronics
- gallium nitride
- laser lift-off (LLO)
- light-emitting diodes
- transfer printing
ASJC Scopus subject areas
- General Chemistry
- Engineering (miscellaneous)
- Biotechnology
- General Materials Science
- Biomaterials