High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes

Joseph A. Letizia; Antonio Facchetti; Charlotte L. Stern; Mark A. Ratner; Tobin J. Marks

doi:10.1021/ja054276o

High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes

Joseph A. Letizia, Antonio Facchetti^*, Charlotte L. Stern, Mark A. Ratner, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

181 Scopus citations

Abstract

New carbonyl-functionalized quaterthiophenes, 5,5‴-diperfluorophenylcarbonyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DFCO-4T], 5,5‴-diphenyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3′-n-octyl-2,2′-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high I_on:I_off current ratios (up to 10⁸) and electron mobilities up to ∼0.51 and ∼0.25 cm²·V^-1·s^-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of ∼0.01 cm²·V^-1·s^-1 (I_on:I_off = 10⁴).

Original language	English (US)
Pages (from-to)	13476-13477
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	127
Issue number	39
DOIs	https://doi.org/10.1021/ja054276o
State	Published - Oct 5 2005

ASJC Scopus subject areas

General Chemistry
Biochemistry
Catalysis
Colloid and Surface Chemistry

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10.1021/ja054276o

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@article{5a95c9da93a64159bb968631fc835b64,

title = "High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes",

abstract = "New carbonyl-functionalized quaterthiophenes, 5,5‴-diperfluorophenylcarbonyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DFCO-4T], 5,5‴-diphenyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3′-n-octyl-2,2′-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high Ion:Ioff current ratios (up to 108) and electron mobilities up to ∼0.51 and ∼0.25 cm2·V-1·s-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of ∼0.01 cm2·V-1·s-1 (Ion:Ioff = 104).",

author = "Letizia, {Joseph A.} and Antonio Facchetti and Stern, {Charlotte L.} and Ratner, {Mark A.} and Marks, {Tobin J.}",

year = "2005",

month = oct,

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doi = "10.1021/ja054276o",

language = "English (US)",

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High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes. / Letizia, Joseph A.; Facchetti, Antonio; Stern, Charlotte L. et al.
In: Journal of the American Chemical Society, Vol. 127, No. 39, 05.10.2005, p. 13476-13477.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors

T2 - Toward N-type polythiophenes

AU - Letizia, Joseph A.

AU - Facchetti, Antonio

AU - Stern, Charlotte L.

AU - Ratner, Mark A.

AU - Marks, Tobin J.

PY - 2005/10/5

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N2 - New carbonyl-functionalized quaterthiophenes, 5,5‴-diperfluorophenylcarbonyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DFCO-4T], 5,5‴-diphenyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3′-n-octyl-2,2′-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high Ion:Ioff current ratios (up to 108) and electron mobilities up to ∼0.51 and ∼0.25 cm2·V-1·s-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of ∼0.01 cm2·V-1·s-1 (Ion:Ioff = 104).

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High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes

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CCDC 288775: Experimental Crystal Structure Determination

CCDC 288774: Experimental Crystal Structure Determination

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High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes

Abstract

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CCDC 288775: Experimental Crystal Structure Determination

CCDC 288774: Experimental Crystal Structure Determination

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