High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: Toward N-type polythiophenes

Joseph A. Letizia, Antonio Facchetti*, Charlotte L. Stern, Mark A. Ratner, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticle

166 Scopus citations

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