High-field magnetoresistance in p-(In,Mn)As/n-InAs heterojunctions

S. J. May*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The high-field magnetoresistive properties of a p- In0.96 Mn0.04 Asn-InAs junction have been measured. The heterojunction was formed by epitaxially depositing an InMnAs thin film on an InAs substrate using metalorganic vapor phase epitaxy. Under forward bias, a large nonsaturating magnetoresistance is observed at temperatures from 25 to 295 K in fields up to 9 T. At room temperature, the magnetoresistance increases linearly with magnetic field from 1.5 to 9 T and is greater than 700% at 9 T. The magnetoresistance can be simulated using a modified diode equation, including a field-dependent series magnetoresistance.

Original languageEnglish (US)
Article number072105
JournalApplied Physics Letters
Volume88
Issue number7
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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