TY - JOUR
T1 - High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices
AU - Chevallier, Romain
AU - Haddadi, Abbas
AU - McClintock, Ryan
AU - Dehzangi, Arash
AU - Lopez-Dominguez, Victor
AU - Khalili Amiri, Pedram
AU - Razeghi, Manijeh
N1 - Funding Information:
Manuscript received May 17, 2018; revised August 7, 2018; accepted September 3, 2018. Date of publication September 20, 2018; date of current version October 24, 2018. This material is based on research sponsored by Air Force Research Lab (AFRL) and the Defense Advanced Research Projects Agency (DARPA) under agreement number FA8650-18-1-7810. (Corresponding author: Manijeh Razeghi.) R. Chevallier, A. Haddadi, R. McClintock, A. Dehzangi, and M. Razeghi are with the Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208 USA (e-mail: razeghi@eecs.northwestern.edu).
Publisher Copyright:
© 1965-2012 IEEE.
PY - 2018/12
Y1 - 2018/12
N2 - InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 $\mu \text{m}$ and a -3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 $\mu \text{m}$ diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance.
AB - InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 $\mu \text{m}$ and a -3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 $\mu \text{m}$ diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance.
KW - Type-II superlattice
KW - high frequency
KW - infrared photodetectors
KW - telecommunications
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U2 - 10.1109/JQE.2018.2871367
DO - 10.1109/JQE.2018.2871367
M3 - Article
AN - SCOPUS:85053637919
VL - 54
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 6
M1 - 8469003
ER -