High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices

Romain Chevallier, Abbas Haddadi, Ryan McClintock, Arash Dehzangi, Victor Lopez-Dominguez, Pedram Khalili Amiri, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

InAs/GaSb/AlSb type-II superlattice-based photodetectors, with 50% cut-off wavelength of 2.1 $\mu \text{m}$ and a -3 dB cut-off frequency of 4.8 GHz, are demonstrated, for 10 $\mu \text{m}$ diameter circular mesas under 15 V applied reverse bias. A study of the cut-off frequency with applied bias and mesa size was performed to evaluate some of the limiting factors of photodetectors high frequency performance.

Original languageEnglish (US)
Article number8469003
JournalIEEE Journal of Quantum Electronics
Volume54
Issue number6
DOIs
StatePublished - Dec 2018

Keywords

  • Type-II superlattice
  • high frequency
  • infrared photodetectors
  • telecommunications

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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