High-mobility air-stable n-type semiconductors with processing versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)

Brooks A. Jones; Michael J. Ahrens; Myung Han Yoon; Antonio Facchetti; Tobin Jay Marks; Michael R Wasielewski

doi:10.1002/anie.200461324

High-mobility air-stable n-type semiconductors with processing versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)

Brooks A. Jones^*, Michael J. Ahrens, Myung Han Yoon, Antonio Facchetti, Tobin Jay Marks, Michael R Wasielewski

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

833 Scopus citations

Abstract

Taking up the semiconducting baton: Organic field-effect transistors fabricated with a new class of extremely electron-deficient cyanated perylene diimides are air-stable and exhibit n-type mobilities as high as 0.64 cm ²V^-1 s^-1 (see scheme). Devices can be fabricated from vapor-deposited and solution-cast films as well as top- and bottom-contact electrode configurations. (Graph presented).

Original language	English (US)
Pages (from-to)	6363-6366
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	43
Issue number	46
DOIs	https://doi.org/10.1002/anie.200461324
State	Published - Nov 26 2004

Keywords

Conducting materials
Electron transport
Perylenes
Semiconductors

ASJC Scopus subject areas

Catalysis
Chemistry(all)

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10.1002/anie.200461324

Cite this

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title = "High-mobility air-stable n-type semiconductors with processing versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)",

abstract = "Taking up the semiconducting baton: Organic field-effect transistors fabricated with a new class of extremely electron-deficient cyanated perylene diimides are air-stable and exhibit n-type mobilities as high as 0.64 cm 2V-1 s-1 (see scheme). Devices can be fabricated from vapor-deposited and solution-cast films as well as top- and bottom-contact electrode configurations. (Graph presented).",

keywords = "Conducting materials, Electron transport, Perylenes, Semiconductors",

author = "Jones, {Brooks A.} and Ahrens, {Michael J.} and Yoon, {Myung Han} and Antonio Facchetti and Marks, {Tobin Jay} and Wasielewski, {Michael R}",

year = "2004",

month = nov,

day = "26",

doi = "10.1002/anie.200461324",

language = "English (US)",

volume = "43",

pages = "6363--6366",

journal = "Angewandte Chemie - International Edition",

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T1 - High-mobility air-stable n-type semiconductors with processing versatility

T2 - Dicyanoperylene-3,4:9,10-bis(dicarboximides)

AU - Jones, Brooks A.

AU - Ahrens, Michael J.

AU - Yoon, Myung Han

AU - Facchetti, Antonio

AU - Marks, Tobin Jay

AU - Wasielewski, Michael R

PY - 2004/11/26

Y1 - 2004/11/26

N2 - Taking up the semiconducting baton: Organic field-effect transistors fabricated with a new class of extremely electron-deficient cyanated perylene diimides are air-stable and exhibit n-type mobilities as high as 0.64 cm 2V-1 s-1 (see scheme). Devices can be fabricated from vapor-deposited and solution-cast films as well as top- and bottom-contact electrode configurations. (Graph presented).

AB - Taking up the semiconducting baton: Organic field-effect transistors fabricated with a new class of extremely electron-deficient cyanated perylene diimides are air-stable and exhibit n-type mobilities as high as 0.64 cm 2V-1 s-1 (see scheme). Devices can be fabricated from vapor-deposited and solution-cast films as well as top- and bottom-contact electrode configurations. (Graph presented).

KW - Conducting materials

KW - Electron transport

KW - Perylenes

KW - Semiconductors

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SN - 1433-7851

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ER -

High-mobility air-stable n-type semiconductors with processing versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)

Abstract

Keywords

ASJC Scopus subject areas

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CCDC 247498: Experimental Crystal Structure Determination

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High-mobility air-stable n-type semiconductors with processing versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Datasets

CCDC 247498: Experimental Crystal Structure Determination

Cite this