High-mobility ambipolar transport in organic light-emitting transistors

Franco Dinelli; Raffaella Capelli; Maria A. Loi; Mauro Murgia; Michele Muccini; Antonio Facchetti; Tobin J. Marks

doi:10.1002/adma.200502164

High-mobility ambipolar transport in organic light-emitting transistors

Franco Dinelli^*, Raffaella Capelli, Maria A. Loi, Mauro Murgia, Michele Muccini, Antonio Facchetti, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

210 Scopus citations

Abstract

Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10^-2cm² V ^-1s^-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.

Original language	English (US)
Pages (from-to)	1416-1420
Number of pages	5
Journal	Advanced Materials
Volume	18
Issue number	11
DOIs	https://doi.org/10.1002/adma.200502164
State	Published - Jun 6 2006

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10-2cm2 V -1s-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.",

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AU - Dinelli, Franco

AU - Capelli, Raffaella

AU - Loi, Maria A.

AU - Murgia, Mauro

AU - Muccini, Michele

AU - Facchetti, Antonio

AU - Marks, Tobin J.

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N2 - Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10-2cm2 V -1s-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.

AB - Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10-2cm2 V -1s-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.

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High-mobility ambipolar transport in organic light-emitting transistors

Abstract

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