Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10-2cm2 V -1s-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Jun 6 2006|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering