High-mobility ambipolar transport in organic light-emitting transistors

Franco Dinelli*, Raffaella Capelli, Maria A. Loi, Mauro Murgia, Michele Muccini, Antonio Facchetti, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

202 Scopus citations

Abstract

Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10-2cm2 V -1s-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.

Original languageEnglish (US)
Pages (from-to)1416-1420
Number of pages5
JournalAdvanced Materials
Volume18
Issue number11
DOIs
StatePublished - Jun 6 2006

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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