High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Byungwook Yoo*, Taeho Jung, Debarshi Basu, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R. Wasielewski, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticle

139 Scopus citations

Abstract

The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

Original languageEnglish (US)
Article number082104
JournalApplied Physics Letters
Volume88
Issue number8
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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