High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Byungwook Yoo; Taeho Jung; Debarshi Basu; Ananth Dodabalapur; Brooks A. Jones; Antonio Facchetti; Michael R. Wasielewski; Tobin J. Marks

doi:10.1063/1.2177627

High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Byungwook Yoo^*, Taeho Jung, Debarshi Basu, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R. Wasielewski, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

145 Scopus citations

Abstract

The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

Original language	English (US)
Article number	082104
Journal	Applied Physics Letters
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.2177627
State	Published - 2006

Funding

The authors gratefully acknowledge support from the AFOSR (STTR FA 9550-04-0080), the NSF through an NIRT (ECS-021698), the NASA Institute for Nanoelectronics and Computing (NCC2-3163), ONR (N00014-05-1-0021), and NSF through the Northwestern MRSEC (DMR-0076097). The authors also acknowledge helpful support from OrganicID, Inc.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators",

abstract = "The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.",

author = "Byungwook Yoo and Taeho Jung and Debarshi Basu and Ananth Dodabalapur and Jones, {Brooks A.} and Antonio Facchetti and Wasielewski, {Michael R.} and Marks, {Tobin J.}",

note = "Funding Information: The authors gratefully acknowledge support from the AFOSR (STTR FA 9550-04-0080), the NSF through an NIRT (ECS-021698), the NASA Institute for Nanoelectronics and Computing (NCC2-3163), ONR (N00014-05-1-0021), and NSF through the Northwestern MRSEC (DMR-0076097). The authors also acknowledge helpful support from OrganicID, Inc. ",

year = "2006",

doi = "10.1063/1.2177627",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

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T1 - High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

AU - Yoo, Byungwook

AU - Jung, Taeho

AU - Basu, Debarshi

AU - Dodabalapur, Ananth

AU - Jones, Brooks A.

AU - Facchetti, Antonio

AU - Wasielewski, Michael R.

AU - Marks, Tobin J.

N1 - Funding Information: The authors gratefully acknowledge support from the AFOSR (STTR FA 9550-04-0080), the NSF through an NIRT (ECS-021698), the NASA Institute for Nanoelectronics and Computing (NCC2-3163), ONR (N00014-05-1-0021), and NSF through the Northwestern MRSEC (DMR-0076097). The authors also acknowledge helpful support from OrganicID, Inc.

PY - 2006

Y1 - 2006

N2 - The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

AB - The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

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High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

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