High mobility GaAs-Alx Ga1-x as single period modulation-doped heterojunctions

L. C. Witkowski, T. J. Drummond, S. A. Barnett, H. Morkoc, A. Y. Cho, J. E. Greene

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Single period modulation-doped structures composed of an AlxGa1-xAs layer, part of which is doped with Si, on top of an undoped GaAs layer have been grown by molecular beam epitaxy. The films were characterised using Hall effect measurements carried out at temperatures between 10 and 300 K. With 50-75 A thick undoped (Al, Ga)As layers near the interface, mobilities in excess of 115000 cm2/Vs at 10 K and 7450 cm2/Vs at 300 K have been achieved for an average doping concentration of ~ 5 × 1016 cm-3. These are some of the highest mobilities as yet obtained from modulation-doped structures, and represent an increase in mobility over equivalently doped GaAs by about a factor of 20 at 10 K and by a factor of 2 at 300 K.

Original languageEnglish (US)
Pages (from-to)126-128
Number of pages3
JournalElectronics Letters
Volume17
Issue number3
DOIs
StatePublished - Feb 5 1981

Keywords

  • Doping
  • Epitaxy
  • Semiconductors (III-V)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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