High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAsInGaAsInAlAsInP quantum dot infrared photodetector

S. Tsao; H. Lim; W. Zhang; M. Razeghi

doi:10.1063/1.2740111

High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAsInGaAsInAlAsInP quantum dot infrared photodetector

S. Tsao^*, H. Lim, W. Zhang, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 μm, a responsivity of 34 mAW, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K.

Original language	English (US)
Article number	201109
Journal	Applied Physics Letters
Volume	90
Issue number	20
DOIs	https://doi.org/10.1063/1.2740111
State	Published - 2007

Funding

The authors would like to acknowledge NASA for their student fellowship support.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2740111

Cite this

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title = "High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAsInGaAsInAlAsInP quantum dot infrared photodetector",

abstract = "This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 μm, a responsivity of 34 mAW, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K.",

author = "S. Tsao and H. Lim and W. Zhang and M. Razeghi",

note = "Funding Information: The authors would like to acknowledge NASA for their student fellowship support.",

year = "2007",

doi = "10.1063/1.2740111",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

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AU - Tsao, S.

AU - Lim, H.

AU - Zhang, W.

AU - Razeghi, M.

N1 - Funding Information: The authors would like to acknowledge NASA for their student fellowship support.

PY - 2007

Y1 - 2007

N2 - This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 μm, a responsivity of 34 mAW, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K.

AB - This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 μm, a responsivity of 34 mAW, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K.

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ER -

High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAsInGaAsInAlAsInP quantum dot infrared photodetector

Abstract

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ASJC Scopus subject areas

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