High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAsInGaAsInAlAsInP quantum dot infrared photodetector

S. Tsao*, H. Lim, W. Zhang, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200 K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device's low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4 μm, a responsivity of 34 mAW, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344 mK at an operating temperature of 120 K.

Original languageEnglish (US)
Article number201109
JournalApplied Physics Letters
Volume90
Issue number20
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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