High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice

Manijeh Razeghi*, Binh Minh Nguyen, Pierre Yves Delaunay, Siamak Abdollahi Pour, Edward Kwei Wei Huang, Paritosh Manukar, Simeon Bogdanov, Guanxi Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ∼4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (106 Ohm.cm2) and a detectivity of 3x10 13cm.Hz1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices VII
StatePublished - May 13 2010
EventQuantum Sensing and Nanophotonic Devices VII - San Francisco, CA, United States
Duration: Jan 24 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices VII
Country/TerritoryUnited States
CitySan Francisco, CA


  • Focal plane arrays
  • InAs/GaSb
  • M-structure
  • MWIR
  • Photodetectors
  • Type II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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