High operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice

Manijeh Razeghi*, Siamak Abdollahi Pour, Edward Huang, Guanxi Chen, Abbas Haddadi, Binh Minh Nguyen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Recent efforts have been paid to elevate the operating temperature of Type II superlattice Mid Infrared photon detectors. Using M-structure superlattice, novel device architectures have been developed, resulting in significant improvement of the device performances. In this paper, we will compare different photodetector architectures and discuss the optimization scheme which leads to almost one order of magnitude of improvement to the electrical performance. At 150K, single element detectors exhibit a quantum efficiency above 50%, and a specific detectivity of 1.05×1012 cm.Hz1/2/W. BLIP operation with a 300K background and 2π FOV can be reached with an operating temperature up to 180K. High quality focal plane arrays were demonstrated with a noise equivalent temperature difference (NEDT) of 11mK up to 120K. Human body imaging is achieved at 150K with NEDT of 150mK.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXVII
DOIs
StatePublished - 2011
EventInfrared Technology and Applications XXXVII - Orlando, FL, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8012
ISSN (Print)0277-786X

Other

OtherInfrared Technology and Applications XXXVII
Country/TerritoryUnited States
CityOrlando, FL
Period4/25/114/29/11

Keywords

  • InAs/GaSb
  • Infrared detector
  • MWIR
  • Photodetectors
  • Tunneling barrier
  • Type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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