Abstract
Recent efforts have been paid to elevate the operating temperature of Type II superlattice Mid Infrared photon detectors. Using M-structure superlattice, novel device architectures have been developed, resulting in significant improvement of the device performances. In this paper, we will compare different photodetector architectures and discuss the optimization scheme which leads to almost one order of magnitude of improvement to the electrical performance. At 150K, single element detectors exhibit a quantum efficiency above 50%, and a specific detectivity of 1.05×1012 cm.Hz1/2/W. BLIP operation with a 300K background and 2π FOV can be reached with an operating temperature up to 180K. High quality focal plane arrays were demonstrated with a noise equivalent temperature difference (NEDT) of 11mK up to 120K. Human body imaging is achieved at 150K with NEDT of 150mK.
Original language | English (US) |
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Title of host publication | Infrared Technology and Applications XXXVII |
Volume | 8012 |
DOIs | |
State | Published - Sep 26 2011 |
Event | Infrared Technology and Applications XXXVII - Orlando, FL, United States Duration: Apr 25 2011 → Apr 29 2011 |
Other
Other | Infrared Technology and Applications XXXVII |
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Country/Territory | United States |
City | Orlando, FL |
Period | 4/25/11 → 4/29/11 |
Keywords
- InAs/GaSb
- Infrared detector
- MWIR
- Photodetectors
- Tunneling barrier
- Type-II superlattice
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering