High optical response in forward biased (In,Ga)N-GaN multiquantum-well diodes under barrier illumination

Jose Luis Pau*, Ryan McClintock, Can Bayram, Kathryn Minder, Donald Silversmith, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The authors report on the current-voltage (I-V) characteristic under forward biases obtained in low leakage, small size p-(In,Ga)N-GaN-n multiquantum well diodes. Under barrier illumination, the devices present a high optical response with capabilities to detect optical powers in the pW range without further amplification. This response is attributed to the screening of the internal electric fields. Recombination times of a few seconds are found to be associated to this mechanism. Moreover, a step-like feature is found in the I-V characteristic before the diode turn-on voltage. Our model proposes tunneling current through the multiquantum-well structure as responsible of this feature. Fast modulation of the tunneling effect under barrier illumination is used to evaluate the detection of low photon fluxes.

Original languageEnglish (US)
Pages (from-to)346-353
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume44
Issue number4
DOIs
StatePublished - Dec 1 2008

Keywords

  • III-nitride
  • Photocurrent gain
  • Single photon detection
  • Ultraviolet detectors

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High optical response in forward biased (In,Ga)N-GaN multiquantum-well diodes under barrier illumination'. Together they form a unique fingerprint.

Cite this