TY - JOUR
T1 - High peak power 16 μm InP-related quantum cascade laser
AU - Szerling, A.
AU - Slivken, S.
AU - Razeghi, M.
N1 - Funding Information:
Anna Szerling would like to thank Kamil Kosiel, Ph.D., D.Sc. (from Instytut Technologii Elektronowej, Warsaw, Poland) for the fruitful discussion. The work was in part financially supported by project LIDER/34/70/L-3/11/NCBR/2012 by the Polish National Center for Research and Development . Dr Anna Szerling was supported by COST ACTION MP1204 TERA-MIR Radiation: Materials, Generation, Detection and Applications.
Publisher Copyright:
© 2017 Association of Polish Electrical Engineers (SEP)
PY - 2017/9
Y1 - 2017/9
N2 - In this paper ∼16 μm-emitting multimode InP-related quantum cascade lasers are presented with the maximum operating temperature 373 K, peak and average optical power equal to 720 mW and 4.8 mW at 303 K, respectively, and the characteristic temperature (T0) 272 K. Two types of the lasers were fabricated and characterized: the lasers with a SiO2 layer left untouched in the area of the metal-free window on top of the ridge, and the lasers with the SiO2 layer removed from the metal-free window area. Dual-wavelength operation was obtained, at λ ∼ 15.6 μm (641 cm−1) and at λ ∼ 16.6 μm (602 cm−1) for lasers with SiO2 removed, while within the emission spectrum of the lasers with SiO2 left untouched only the former lasing peak was present. The parameters of these devices like threshold current, optical power and emission wavelength are compared. Lasers without the SiO2 layer showed ∼15% lower threshold current than these ones with the SiO2 layer. The optical powers for lasers without SiO2 layer were almost twice higher than for the lasers with the SiO2 layer on the top of the ridge.
AB - In this paper ∼16 μm-emitting multimode InP-related quantum cascade lasers are presented with the maximum operating temperature 373 K, peak and average optical power equal to 720 mW and 4.8 mW at 303 K, respectively, and the characteristic temperature (T0) 272 K. Two types of the lasers were fabricated and characterized: the lasers with a SiO2 layer left untouched in the area of the metal-free window on top of the ridge, and the lasers with the SiO2 layer removed from the metal-free window area. Dual-wavelength operation was obtained, at λ ∼ 15.6 μm (641 cm−1) and at λ ∼ 16.6 μm (602 cm−1) for lasers with SiO2 removed, while within the emission spectrum of the lasers with SiO2 left untouched only the former lasing peak was present. The parameters of these devices like threshold current, optical power and emission wavelength are compared. Lasers without the SiO2 layer showed ∼15% lower threshold current than these ones with the SiO2 layer. The optical powers for lasers without SiO2 layer were almost twice higher than for the lasers with the SiO2 layer on the top of the ridge.
KW - InP
KW - Quantum cascade lasers
KW - SiO layer
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U2 - 10.1016/j.opelre.2017.06.007
DO - 10.1016/j.opelre.2017.06.007
M3 - Article
AN - SCOPUS:85028802302
SN - 1230-3402
VL - 25
SP - 205
EP - 208
JO - Opto-electronics Review
JF - Opto-electronics Review
IS - 3
ER -