High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

Xinming Zhuang; Joon Seok Kim; Wei Huang; Yao Chen; Gang Wang; Jianhua Chen; Yao Yao; Zhi Wang; Fengjing Liu; Junsheng Yu; Yuhua Cheng; Zaixing Yang; Lincoln J. Lauhon; Tobin Jay Marks; Antonio Facchetti

doi:10.1073/pnas.2216672120

High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

Xinming Zhuang, Joon Seok Kim, Wei Huang^*, Yao Chen, Gang Wang, Jianhua Chen, Yao Yao, Zhi Wang^*, Fengjing Liu, Junsheng Yu, Yuhua Cheng, Zaixing Yang^*, Lincoln J. Lauhon^*, Tobin Jay Marks^*, Antonio Facchetti^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In₂O₃/ In₂O₃:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO₂. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO_x gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.

Original language	English (US)
Article number	e2216672120
Journal	Proceedings of the National Academy of Sciences of the United States of America
Volume	120
Issue number	3
DOIs	https://doi.org/10.1073/pnas.2216672120
State	Published - Jan 17 2023

Funding

ACKNOWLEDGMENTS. This work was supported by the NSF MRSEC program (grant DMR-1720139) and by AFOSR (grants FA9550-18-1-0320 and FA9550-22-1-0423). This work made use of the Northwestern University Micro/Nano Fabrication Facility (NUFAB),and EPIC facility of Northwestern University’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205); the MRSEC program (NSF DMR-1720139) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. X.Z. thanks the National Natural Science Foundation of China (NSFC) (Grant Nos. U21A20492 & 62104133); Natural Science Foundation of Shandong Province (ZR2021QA011); China Postdoctoral Science Foundation (2021M701976); Postdoctoral Program for Innovative Talents of Shandong Province (SDBX2021002). We also gratefully acknowledge Q. Zhang’s kind help in drawing the eye diagram.

Keywords

EOG monitoring
Kelvin probe force microscopy
metal oxide–polymer blend material
solution processing
source-gated transistor (SGT)

ASJC Scopus subject areas

General

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10.1073/pnas.2216672120

Cite this

Zhuang, X., Kim, J. S., Huang, W., Chen, Y., Wang, G., Chen, J., Yao, Y., Wang, Z., Liu, F., Yu, J., Cheng, Y., Yang, Z., Lauhon, L. J., Marks, T. J., & Facchetti, A. (2023). High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction. Proceedings of the National Academy of Sciences of the United States of America, 120(3), Article e2216672120. https://doi.org/10.1073/pnas.2216672120

@article{470aa1f7c7ae46b588d9b84107975e03,

title = "High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction",

abstract = "Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In2O3/ In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.",

keywords = "EOG monitoring, Kelvin probe force microscopy, metal oxide–polymer blend material, solution processing, source-gated transistor (SGT)",

author = "Xinming Zhuang and Kim, {Joon Seok} and Wei Huang and Yao Chen and Gang Wang and Jianhua Chen and Yao Yao and Zhi Wang and Fengjing Liu and Junsheng Yu and Yuhua Cheng and Zaixing Yang and Lauhon, {Lincoln J.} and Marks, {Tobin Jay} and Antonio Facchetti",

note = "Funding Information: ACKNOWLEDGMENTS. This work was supported by the NSF MRSEC program (grant DMR-1720139) and by AFOSR (grants FA9550-18-1-0320 and FA9550-22-1-0423). This work made use of the Northwestern University Micro/Nano Fabrication Facility (NUFAB),and EPIC facility of Northwestern University{\textquoteright}s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205); the MRSEC program (NSF DMR-1720139) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. X.Z. thanks the National Natural Science Foundation of China (NSFC) (Grant Nos. U21A20492 & 62104133); Natural Science Foundation of Shandong Province (ZR2021QA011); China Postdoctoral Science Foundation (2021M701976); Postdoctoral Program for Innovative Talents of Shandong Province (SDBX2021002). We also gratefully acknowledge Q. Zhang{\textquoteright}s kind help in drawing the eye diagram. Publisher Copyright: Copyright {\textcopyright} 2023 the Author(s).",

year = "2023",

month = jan,

day = "17",

doi = "10.1073/pnas.2216672120",

language = "English (US)",

volume = "120",

journal = "Proceedings of the National Academy of Sciences of the United States of America",

issn = "0027-8424",

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Zhuang, X, Kim, JS, Huang, W, Chen, Y, Wang, G, Chen, J, Yao, Y, Wang, Z, Liu, F, Yu, J, Cheng, Y, Yang, Z, Lauhon, LJ , Marks, TJ & Facchetti, A 2023, 'High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction', Proceedings of the National Academy of Sciences of the United States of America, vol. 120, no. 3, e2216672120. https://doi.org/10.1073/pnas.2216672120

TY - JOUR

T1 - High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

AU - Zhuang, Xinming

AU - Kim, Joon Seok

AU - Huang, Wei

AU - Chen, Yao

AU - Wang, Gang

AU - Chen, Jianhua

AU - Yao, Yao

AU - Wang, Zhi

AU - Liu, Fengjing

AU - Yu, Junsheng

AU - Cheng, Yuhua

AU - Yang, Zaixing

AU - Lauhon, Lincoln J.

AU - Marks, Tobin Jay

AU - Facchetti, Antonio

N1 - Funding Information: ACKNOWLEDGMENTS. This work was supported by the NSF MRSEC program (grant DMR-1720139) and by AFOSR (grants FA9550-18-1-0320 and FA9550-22-1-0423). This work made use of the Northwestern University Micro/Nano Fabrication Facility (NUFAB),and EPIC facility of Northwestern University’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205); the MRSEC program (NSF DMR-1720139) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. X.Z. thanks the National Natural Science Foundation of China (NSFC) (Grant Nos. U21A20492 & 62104133); Natural Science Foundation of Shandong Province (ZR2021QA011); China Postdoctoral Science Foundation (2021M701976); Postdoctoral Program for Innovative Talents of Shandong Province (SDBX2021002). We also gratefully acknowledge Q. Zhang’s kind help in drawing the eye diagram. Publisher Copyright: Copyright © 2023 the Author(s).

PY - 2023/1/17

Y1 - 2023/1/17

N2 - Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In2O3/ In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.

AB - Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In2O3/ In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.

KW - EOG monitoring

KW - Kelvin probe force microscopy

KW - metal oxide–polymer blend material

KW - solution processing

KW - source-gated transistor (SGT)

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UR - http://www.scopus.com/inward/citedby.url?scp=85146193072&partnerID=8YFLogxK

U2 - 10.1073/pnas.2216672120

DO - 10.1073/pnas.2216672120

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SN - 0027-8424

VL - 120

JO - Proceedings of the National Academy of Sciences of the United States of America

JF - Proceedings of the National Academy of Sciences of the United States of America

IS - 3

M1 - e2216672120

ER -

High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

Abstract

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Keywords

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