TY - JOUR
T1 - High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
AU - Zhuang, Xinming
AU - Kim, Joon Seok
AU - Huang, Wei
AU - Chen, Yao
AU - Wang, Gang
AU - Chen, Jianhua
AU - Yao, Yao
AU - Wang, Zhi
AU - Liu, Fengjing
AU - Yu, Junsheng
AU - Cheng, Yuhua
AU - Yang, Zaixing
AU - Lauhon, Lincoln J.
AU - Marks, Tobin Jay
AU - Facchetti, Antonio
N1 - Funding Information:
ACKNOWLEDGMENTS. This work was supported by the NSF MRSEC program (grant DMR-1720139) and by AFOSR (grants FA9550-18-1-0320 and FA9550-22-1-0423). This work made use of the Northwestern University Micro/Nano Fabrication Facility (NUFAB),and EPIC facility of Northwestern University’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205); the MRSEC program (NSF DMR-1720139) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. X.Z. thanks the National Natural Science Foundation of China (NSFC) (Grant Nos. U21A20492 & 62104133); Natural Science Foundation of Shandong Province (ZR2021QA011); China Postdoctoral Science Foundation (2021M701976); Postdoctoral Program for Innovative Talents of Shandong Province (SDBX2021002). We also gratefully acknowledge Q. Zhang’s kind help in drawing the eye diagram.
Publisher Copyright:
Copyright © 2023 the Author(s).
PY - 2023/1/17
Y1 - 2023/1/17
N2 - Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In2O3/ In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.
AB - Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In2O3/ In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.
KW - EOG monitoring
KW - Kelvin probe force microscopy
KW - metal oxide–polymer blend material
KW - solution processing
KW - source-gated transistor (SGT)
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U2 - 10.1073/pnas.2216672120
DO - 10.1073/pnas.2216672120
M3 - Article
C2 - 36630451
AN - SCOPUS:85146193072
SN - 0027-8424
VL - 120
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
IS - 3
M1 - e2216672120
ER -