High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
Xinming Zhuang, Joon Seok Kim, Wei Huang*, Yao Chen, Gang Wang, Jianhua Chen, Yao Yao, Zhi Wang*, Fengjing Liu, Junsheng Yu, Yuhua Cheng, Zaixing Yang*, Lincoln J. Lauhon*, Tobin Jay Marks*, Antonio Facchetti*
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