High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

Sung Min Kwon, Jong Kook Won, Jeong Wan Jo, Jaehyun Kim, Hee Joong Kim, Hyuck In Kwon, Jaekyun Kim, Sangdoo Ahn, Yong Hoon Kim, Myoung Jae Lee, Hyung Ik Lee, Tobin J. Marks, Myung Gil Kim, Sung Kyu Park*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


We report a general strategy for obtaining high-quality, large-areametal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels,which are easily transformed into the corresponding highperformance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQx: M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400°C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In2Se3 active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm2 V-1 s-1 with an on/off current ratio of >107 and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition,metal chalcogenide-based phototransistors with a photodetectivity of >1013 Jones and seven-stage ring oscillators operating at a speed of ∼2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated.

Original languageEnglish (US)
Article numbereaap9104
JournalScience Advances
Issue number4
StatePublished - Apr 13 2018

ASJC Scopus subject areas

  • General


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