High performance and stable N-channel organic field-effect transistors by patterned solvent-vapor annealing

Dongyoon Khim, Kang Jun Baeg, Juhwan Kim, Minji Kang, Seung Hoon Lee, Zhihua Chen, Antonio Facchetti*, Dong Yu Kim, Yong Young Noh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

We report the fabrication of high-performance, printed, n-channel organic field-effect transistors (OFETs) based on an N,N-dialkyl-substituted-(1,7&1, 6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative, PDI-RCN2, optimized by the solvent-vapor annealing (SVA) process. We performed a systematic study on the influence of solubility and the chemical structure of a solvent used for the SVA process on the ordering and orientation of PDI-RCN2 molecules in the thin film. The PDI-RCN2 film showed improved crystallinity under vapor annealing with the aliphatic 1,2-dichloroethane (DCE) as a marginal solvent. The n-type OFETs with DCE-vapor-annealed PDI-RCN2 show highly improved charge-carrier mobility of ∼0.5 cm2 V-1 s-1 and higher stability under gate bias stress than the pristine OFETs. This large performance improvement was mainly attributed to increased crystallinity of the semiconductor thin film, enhancing π-π stacking. We also introduced a new method to pattern crystallinity of a certain region in the semiconducting film by selective exposure to the solvent vapor using a shadow mask. The crystal-patterned PDI-RCN2 OFETs exhibit decreased off-currents by ∼10× and improved gate bias stability by minimizing crosstalk, reducing leakage current between devices, and reducing the density of charge trap states of the organic semiconductor.

Original languageEnglish (US)
Pages (from-to)10745-10752
Number of pages8
JournalACS Applied Materials and Interfaces
Volume5
Issue number21
DOIs
StatePublished - Nov 13 2013

Keywords

  • bias stress
  • conjugated molecules
  • molecular orientation
  • organic field-effect transistors
  • patterned crystallinity
  • solvent-vapor annealing

ASJC Scopus subject areas

  • Materials Science(all)

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