High performance antimony based type-II superlattice photodiodes on GaAs substrates

Binh Minh Nguyen, Darin Hoffman, Edward Kwei Wei Huang, Pierre Yves Delaunay, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In recent years, Type II InAs/GaSb superlattices grown on GaSb substrate have achieved significant advances in both structural design and material growth, making Type II superlattice infrared detector a rival competitor to the state-of-the-art MCT technology. However, the limited size and strong infrared absorption of GaSb substrates prevent large format type-II superlattice infrared imagers from being realized. In this work, we demonstrate type-II superlattices grown on GaAs substrates, which is a significant step toward third generation infrared imaging at low cost. The device performances of Type II superalttice photodetectors grown on these two substrates are compared.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXV
Volume7298
DOIs
StatePublished - Sep 14 2009
EventInfrared Technology and Applications XXXV - Orlando, FL, United States
Duration: Apr 13 2009Apr 17 2009

Other

OtherInfrared Technology and Applications XXXV
CountryUnited States
CityOrlando, FL
Period4/13/094/17/09

Keywords

  • GaAs substrate
  • MBE growth
  • Type-II InAs/GaSb superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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