High-performance contacts in plastic transistors and logic gates that use printed electrodes of DNNSA-PANI doped with single-walled carbon nanotubes

Michael Lefenfeld, Graciela Blanchet, John A. Rogers*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

130 Scopus citations

Abstract

An overview is given on the excellent electrical properties of contacts in organic transistors and logic gates that use printed electrodes of DNNSA-PANI/SWNT in bottom contact configurations. The large grain sizes observed at and near the contacts are consistent with the observations. The results provide some evidence to suggest that thermal printing with this class of doped conducting polymer or related materials might represent progress toward a useful strategy for building large-area circuits for realistic applications.

Original languageEnglish (US)
Pages (from-to)1188-1191
Number of pages4
JournalAdvanced Materials
Volume15
Issue number14
DOIs
StatePublished - Jul 17 2003

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

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