High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel

(Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm²V^-1S^-1, a current on/off ratio of 10 ⁴, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.