High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel

Jun Liu*, D. Bruce Buchholz, Robert P.H. Chang, Antonio Facchetti, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticle

86 Scopus citations

Abstract

(Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm2V-1S-1, a current on/off ratio of 10 4, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.

Original languageEnglish (US)
Pages (from-to)2333-2337
Number of pages5
JournalAdvanced Materials
Volume22
Issue number21
DOIs
StatePublished - Jun 4 2010

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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