(Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm2V-1S-1, a current on/off ratio of 10 4, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Jun 4 2010|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering