High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength

Pierre Yves Delaunay; Binh Minh Nguyen; Darin Hoffman; Manijeh Razeghi

doi:10.1109/JQE.2008.916701

High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength

Pierre Yves Delaunay^*, Binh Minh Nguyen, Darin Hoffman, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R₀A of diodes passivated with SiO₂ was 23 Ω · cm² after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

Original language	English (US)
Pages (from-to)	462-467
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	44
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2008.916701
State	Published - 2008

Keywords

Focal plane array
Infrared
Photodetectors
Type-II superlattice

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2008.916701

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title = "High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength",

abstract = "We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω · cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.",

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doi = "10.1109/JQE.2008.916701",

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AU - Delaunay, Pierre Yves

AU - Nguyen, Binh Minh

AU - Hoffman, Darin

AU - Razeghi, Manijeh

PY - 2008

Y1 - 2008

N2 - We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω · cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

AB - We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω · cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

KW - Focal plane array

KW - Infrared

KW - Photodetectors

KW - Type-II superlattice

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

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High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength

Abstract

Keywords

ASJC Scopus subject areas

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