Abstract
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω · cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.
Original language | English (US) |
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Pages (from-to) | 462-467 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 44 |
Issue number | 5 |
DOIs | |
State | Published - 2008 |
Keywords
- Focal plane array
- Infrared
- Photodetectors
- Type-II superlattice
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering