High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength

Pierre Yves Delaunay*, Binh Minh Nguyen, Darin Hoffman, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Ω · cm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.

Original languageEnglish (US)
Pages (from-to)462-467
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume44
Issue number5
DOIs
StatePublished - Dec 1 2008

Keywords

  • Focal plane array
  • Infrared
  • Photodetectors
  • Type-II superlattice

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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