High performance focal plane array based on type-II InAs/GaSb superlattice heterostructures

Pierre Yves Delaunay, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations


Recent progress in growth techniques, structure design and processing has lifted the performances of Type-II InAs/GaSb superlattice photodetectors. A double heterostructure design, based on a low band gap (11 μm) active region and high band gap (5 μm) superlattice contacts, reduced the sensitivity of the superlattice to surface effects. The heterodiodes with an 11 μm cutoff, passivated with SiO2, presented similar performances to unpassivated devices and a one order of magnitude increase of the resistivity of the sidewalls, even after flip-chip bonding and underfill. Thanks to this new design and to the inversion of the polarity of the devices, a high performance focal plane array with an 11 μm cutoff was demonstrated. The noise equivalent temperature difference was measured as 26 mK and 19 mK for operating temperatures of 81 K and 67 K. At an integration time of 0.08 ms, the FPA presented a quantum efficiency superior to 50%.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices V
StatePublished - May 15 2008
EventQuantum Sensing and Nanophotonic Devices V - San Jose, CA, United States
Duration: Jan 20 2008Jan 23 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherQuantum Sensing and Nanophotonic Devices V
Country/TerritoryUnited States
CitySan Jose, CA


  • Focal plane array
  • GaSb
  • InAs
  • Infrared
  • LWIR
  • Type-II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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