Recent progress in growth techniques, structure design and processing has lifted the performances of Type-II InAs/GaSb superlattice photodetectors. A double heterostructure design, based on a low band gap (11 μm) active region and high band gap (5 μm) superlattice contacts, reduced the sensitivity of the superlattice to surface effects. The heterodiodes with an 11 μm cutoff, passivated with SiO2, presented similar performances to unpassivated devices and a one order of magnitude increase of the resistivity of the sidewalls, even after flip-chip bonding and underfill. Thanks to this new design and to the inversion of the polarity of the devices, a high performance focal plane array with an 11 μm cutoff was demonstrated. The noise equivalent temperature difference was measured as 26 mK and 19 mK for operating temperatures of 81 K and 67 K. At an integration time of 0.08 ms, the FPA presented a quantum efficiency superior to 50%.