High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, P. D. Ye*, Y. Xuan, G. Lu, A. Facchetti, T. J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


High-performance GaAs metal-insulator-semiconductor field-effect- transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n -channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density < 10-5 A cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mAmm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mSmm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

Original languageEnglish (US)
Article number142101
JournalApplied Physics Letters
Issue number14
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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