High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition

M. Razeghi*, F. Omnes, M. Defour, P. Maurel, J. Hu, E. Wolk, D. Pavlidis

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

The authors report the fabrication of high-quality GaAs/GaInP n-p-n heterojunction bipolar transistors grown by low-pressure metal-organic chemical vapour deposition on semi-insulating substrates. Various structures with homogeneous and graded bases have been fabricated. Doping profiles together with X-ray double diffraction patterns demonstrate the excellent control of growth parameters such as thicknesses, doping levels and interface quality. The static characteristics of the devices show current gains as high as 400, which is the highest value reported in that system.

Original languageEnglish (US)
Article number017
Pages (from-to)278-280
Number of pages3
JournalSemiconductor Science and Technology
Volume5
Issue number3
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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