@inproceedings{5a3395ce8cfb4cce8c4ce56c355f4ee3,
title = "High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array",
abstract = "We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 2.8 × 10 11 cmHz 1/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35 %. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 10 7cmHz 1/2/W. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also fabricated based on this kind of a device. The focal plane array had 34 mA/W responsivity, 1.1 % conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.",
keywords = "Focal plane array, InP, Infrared, MOCVD, Photodetector, Quantum dot",
author = "S. Tsao and H. Lim and W. Zhang and M. Razeghi",
year = "2007",
doi = "10.1117/12.719691",
language = "English (US)",
isbn = "0819467219",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Photonic Materials, Devices, and Applications II",
note = "Photonic Materials, Devices, and Applications II ; Conference date: 02-05-2007 Through 04-05-2007",
}