High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array

S. Tsao*, H. Lim, W. Zhang, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metalorganic chemical vapor depositon. The detectivity was 2.8 × 10 11 cmHz 1/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35 %. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 10 7cmHz 1/2/W. A 320 × 256 middle wavelength infrared focal plane array operating at temperatures up to 200 K was also fabricated based on this kind of a device. The focal plane array had 34 mA/W responsivity, 1.1 % conversion efficiency, and noise equivalent temperature difference of 344 mK at 120 K operating temperature.

Original languageEnglish (US)
Title of host publicationPhotonic Materials, Devices, and Applications II
DOIs
StatePublished - 2007
EventPhotonic Materials, Devices, and Applications II - Maspalomas, Gran Canaria, Spain
Duration: May 2 2007May 4 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6593
ISSN (Print)0277-786X

Other

OtherPhotonic Materials, Devices, and Applications II
CountrySpain
CityMaspalomas, Gran Canaria
Period5/2/075/4/07

Keywords

  • Focal plane array
  • InP
  • Infrared
  • MOCVD
  • Photodetector
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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