High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

H. Lim*, S. Tsao, W. Zhang, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

149 Scopus citations

Abstract

The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8 × 1011cm Hzl/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 107cm Hz1/2/W.

Original languageEnglish (US)
Article number131112
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
StatePublished - Apr 8 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature'. Together they form a unique fingerprint.

Cite this