High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

H. Lim; S. Tsao; W. Zhang; M. Razeghi

doi:10.1063/1.2719160

High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

H. Lim^*, S. Tsao, W. Zhang, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8 × 10¹¹cm Hz^l/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 10⁷cm Hz^1/2/W.

Original language	English (US)
Article number	131112
Journal	Applied Physics Letters
Volume	90
Issue number	13
DOIs	https://doi.org/10.1063/1.2719160
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature",

abstract = "The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8 × 1011cm Hzl/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 107cm Hz1/2/W.",

author = "H. Lim and S. Tsao and W. Zhang and M. Razeghi",

year = "2007",

doi = "10.1063/1.2719160",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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T1 - High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

AU - Lim, H.

AU - Tsao, S.

AU - Zhang, W.

AU - Razeghi, M.

PY - 2007

Y1 - 2007

N2 - The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8 × 1011cm Hzl/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 107cm Hz1/2/W.

AB - The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8 × 1011cm Hzl/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 107cm Hz1/2/W.

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DO - 10.1063/1.2719160

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131112

ER -

High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature

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