The authors report a room temperature operating InAs quantum-dot infrared photodetector grown on InP substrate. The self-assembled InAs quantum dots and the device structure were grown by low-pressure metal-organic chemical vapor deposition. The detectivity was 2.8 × 1011cm Hzl/2/W at 120 K and a bias of -5 V with a peak detection wavelength around 4.1 μm and a quantum efficiency of 35%. Due to the low dark current and high responsivity, a clear photoresponse has been observed at room temperature, which gives a detectivity of 6.7 × 107cm Hz1/2/W.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)