High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier

Donghai Wu, Jiakai Li, Arash Dehzangi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

By introducing a double barrier design, a high performance InAs/InAsSb type-II superlattice mid-wavelength infrared photodetector has been demonstrated. The photodetector exhibits a cut-off wavelength of ~4.50 µm at 150 K. At 150 K and −120 mV applied bias, the photodetector exhibits a dark current density of 1.21 × 10−5 A/cm2, a quantum efficiency of 45% at peak responsivity (~3.95 µm), and a specific detectivity of 6.9 × 1011 cm·Hz1/2/W. The photodetector shows background-limited operating temperature up to 160 K.

Original languageEnglish (US)
Article number103439
JournalInfrared Physics and Technology
Volume109
DOIs
StatePublished - Sep 2020

Keywords

  • Infrared
  • Mid-wavelength
  • Molecular beam epitaxy
  • Photodetector
  • Superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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