High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Stanley Tsao; Kan Mi; John Szafraneic; Wei Zhang; Ho Chul Lim; Bijan Movaghar; Manijeh Razeghi

doi:10.1117/12.597208

High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Stanley Tsao^*, Kan Mi, John Szafraneic, Wei Zhang, Ho Chul Lim, Bijan Movaghar, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3×10 ¹¹ cmHz1/2/W at 77K and 1.2×10 ¹⁰ cmHz ^1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.

Original language	English (US)
Article number	46
Pages (from-to)	334-341
Number of pages	8
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5732
DOIs	https://doi.org/10.1117/12.597208
State	Published - 2005
Event	Quantum Sensing and Nanophotonic Devices II - San Jose, CA, United States Duration: Jan 23 2005 → Jan 27 2005

Keywords

Detectivity
Doping
GaAs
GalnAs
GalnP
MOCVD
Quantum dot infrared photodetector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Radiology Nuclear Medicine and imaging
Biomaterials

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10.1117/12.597208

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@article{271826290b714a6cbfb6149ba1333911,

title = "High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization",

abstract = "We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3×10 11 cmHz1/2/W at 77K and 1.2×10 10 cmHz 1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.",

keywords = "Detectivity, Doping, GaAs, GalnAs, GalnP, MOCVD, Quantum dot infrared photodetector",

author = "Stanley Tsao and Kan Mi and John Szafraneic and Wei Zhang and Lim, {Ho Chul} and Bijan Movaghar and Manijeh Razeghi",

year = "2005",

doi = "10.1117/12.597208",

language = "English (US)",

volume = "5732",

pages = "334--341",

journal = "Progress in Biomedical Optics and Imaging - Proceedings of SPIE",

issn = "1605-7422",

publisher = "SPIE",

note = "Quantum Sensing and Nanophotonic Devices II ; Conference date: 23-01-2005 Through 27-01-2005",

}

TY - JOUR

T1 - High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

AU - Tsao, Stanley

AU - Mi, Kan

AU - Szafraneic, John

AU - Zhang, Wei

AU - Lim, Ho Chul

AU - Movaghar, Bijan

AU - Razeghi, Manijeh

PY - 2005

Y1 - 2005

N2 - We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3×10 11 cmHz1/2/W at 77K and 1.2×10 10 cmHz 1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.

AB - We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3×10 11 cmHz1/2/W at 77K and 1.2×10 10 cmHz 1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.

KW - Detectivity

KW - Doping

KW - GaAs

KW - GalnAs

KW - GalnP

KW - MOCVD

KW - Quantum dot infrared photodetector

UR - http://www.scopus.com/inward/record.url?scp=21844480070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844480070&partnerID=8YFLogxK

U2 - 10.1117/12.597208

DO - 10.1117/12.597208

M3 - Conference article

AN - SCOPUS:21844480070

SN - 1605-7422

VL - 5732

SP - 334

EP - 341

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

M1 - 46

T2 - Quantum Sensing and Nanophotonic Devices II

Y2 - 23 January 2005 through 27 January 2005

ER -

High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Abstract

Keywords

ASJC Scopus subject areas

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