High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Stanley Tsao*, Kan Mi, John Szafraneic, Wei Zhang, Ho Chul Lim, Bijan Movaghar, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3×10 11 cmHz1/2/W at 77K and 1.2×10 10 cmHz 1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.

Original languageEnglish (US)
Article number46
Pages (from-to)334-341
Number of pages8
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

Keywords

  • Detectivity
  • Doping
  • GaAs
  • GalnAs
  • GalnP
  • MOCVD
  • Quantum dot infrared photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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