High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

Paritosh Manurkar; Shaban Ramezani-Darvish; Binh Minh Nguyen; Manijeh Razeghi; John Hubbs

doi:10.1063/1.3514244

High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

Paritosh Manurkar^*, Shaban Ramezani-Darvish, Binh Minh Nguyen, Manijeh Razeghi, John Hubbs

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

93 Scopus citations

Abstract

A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3× 10^-4 A cm ^-2 and differential resistance-area product at zero bias R ₀ A of 166 ξ cm² at 81 K, and 5.1× 10-5 A cm ^-2 and 1286 ξ cm², respectively, at 68 K. The quantum efficiency obtained is 78%.

Original language	English (US)
Article number	193505
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3514244
State	Published - Nov 8 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3514244

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@article{f985c7339c354c968567724b529e3194,

title = "High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices",

abstract = "A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3× 10-4 A cm -2 and differential resistance-area product at zero bias R 0 A of 166 ξ cm2 at 81 K, and 5.1× 10-5 A cm -2 and 1286 ξ cm2, respectively, at 68 K. The quantum efficiency obtained is 78%.",

author = "Paritosh Manurkar and Shaban Ramezani-Darvish and Nguyen, {Binh Minh} and Manijeh Razeghi and John Hubbs",

note = "Funding Information: This work is partially supported through the U.S. Army Night Vision Laboratory and the Missile Defense Agency. The authors would like to thank Dr. Meimei Tidrow (Army NVL) for her support, encouragement and scientific discussions; and Guanxi Chen and Anh Hoang Minh (both from Center for Quantum Devices) for technical support.",

year = "2010",

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doi = "10.1063/1.3514244",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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AU - Manurkar, Paritosh

AU - Ramezani-Darvish, Shaban

AU - Nguyen, Binh Minh

AU - Razeghi, Manijeh

AU - Hubbs, John

N1 - Funding Information: This work is partially supported through the U.S. Army Night Vision Laboratory and the Missile Defense Agency. The authors would like to thank Dr. Meimei Tidrow (Army NVL) for her support, encouragement and scientific discussions; and Guanxi Chen and Anh Hoang Minh (both from Center for Quantum Devices) for technical support.

PY - 2010/11/8

Y1 - 2010/11/8

N2 - A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3× 10-4 A cm -2 and differential resistance-area product at zero bias R 0 A of 166 ξ cm2 at 81 K, and 5.1× 10-5 A cm -2 and 1286 ξ cm2, respectively, at 68 K. The quantum efficiency obtained is 78%.

AB - A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3× 10-4 A cm -2 and differential resistance-area product at zero bias R 0 A of 166 ξ cm2 at 81 K, and 5.1× 10-5 A cm -2 and 1286 ξ cm2, respectively, at 68 K. The quantum efficiency obtained is 78%.

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High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

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