High performance LWIR Type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays

Yajun Wei*, Andrew Hood, Aaron Gin, Vahid Yazdanpanah, Manijeh Razeghi, Meimei Tidrow

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Dark current has become a significant limiting factor for the development of the Type II InAs/GaSb superlattices technology. Experimental results showed that at liquid nitrogen temperature the dominating dark current under reverse bias is the generation-recombination current before the tunneling current turns on. Recent research on the source of the dark current indicated that the Auger recombinations might play a very important role in the superlattice diode dark current. With proper design of the superlattice structure, we have been able to reduce the dark current several orders of magnitude in the L WIR range. The superlattice diode performance was also improved dramatically. Infrared focal plane arrays based on these superlattices will also be discussed.

Original languageEnglish (US)
Article number47
Pages (from-to)309-315
Number of pages7
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - Jul 21 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

Keywords

  • Focal plane array
  • GaSb
  • Generation
  • InAs
  • Infrared
  • Recombination
  • Superlattices
  • Type II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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