Keyphrases
(001) Substrate
20%
Active Regions
20%
Array Imaging
20%
Array-based
20%
Background-limited Performance
20%
Confinement Potential
20%
Density of States
20%
Detection Wavelength
20%
Device Performance
20%
Device Structure
20%
Excited Electrons
20%
Focal Plane Array
100%
GaAs(001)
20%
Gown
20%
High Performance
100%
High Responsivity
20%
Highest Peak
20%
Incident Light
20%
Infrared Range
20%
Infrared Wavelength
20%
InGaAs Quantum Dots
20%
Long Lifetime
20%
Long-wave Infrared
20%
Low Pressure
20%
Metal-organic Chemical Vapor Deposition (MOCVD)
20%
Mid-infrared
20%
Mid-wavelength
100%
Peak Detection
20%
Phonon Bottleneck Effect
20%
Quantum Dots
60%
Quantum Well Infrared Photodetector
100%
Responsivity
20%
Room Temperature Operation
20%
Semi-insulating GaAs
20%
Stranski-Krastanov Growth
20%
Temperature Effect
20%
Temperature Sensitivity
20%
Three-dimensional Confinement
20%
Engineering
Active Region
12%
Chemical Vapor Deposition
12%
Device Performance
12%
Device Structure
12%
Dot Layer
12%
Excited Electron
12%
Focal Plane
100%
Gallium Arsenide
12%
Growth Mode
12%
Indium Gallium Arsenide
12%
Light Incident
12%
Limited Performance
12%
Monolayers
12%
Photometer
100%
Promising Candidate
12%
Quantum Dot
100%
Quantum Well
12%
Responsivity
25%
Room Temperature
12%
Vapor Deposition
12%
Physics
Density of States
12%
Field of View
12%
Focal Plane Device
100%
Metalorganic Chemical Vapor Deposition
12%
Phonon
12%
Photometer
100%
Quantum Dot
100%
Quantum Well Infrared Photodetectors
12%
Room Temperature
12%