The study of high-performance n- and p- type single-crystal organic transistor using free-space gate dielectrics is analyzed. A transistor with a wide range range of channel dimensions and dielectric thickness was built using single crystals of two different molecules. It is observed that the transportation characteristics of the conducting channel depend critically on the properties of the rubrene crystals. It is also observed that the magnitude of the capacitance, which includes contributions from fringing fields that pass through the elastomer, can be accurately predicted by finite element modeling of the electrostatics.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Dec 27 2004|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering