High-performance n -type organic field-effect transistors with ionic liquid gates

S. Ono*, N. Minder, Z. Chen, A. Facchetti, A. F. Morpurgo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


High-performance n -type organic field-effect transistors were developed with ionic-liquid gates and N, N″ -bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm2 /V s. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and n -type organic semiconductor interfaces are suitable to realize high-quality n -type organic transistors operating at small gate voltage, without sacrificing electron mobility.

Original languageEnglish (US)
Article number143307
JournalApplied Physics Letters
Issue number14
StatePublished - Oct 4 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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