Abstract
Thin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5‴-diperfluorohexylcarbonyl-2,2':5',2″:5″, 2‴-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100x lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO→4T.
Original language | English (US) |
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Pages (from-to) | 79-84 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 1154 |
DOIs | |
State | Published - 2009 |
Event | 2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics - San Francisco, CA, United States Duration: Apr 13 2009 → Apr 17 2009 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering