High performance n-type organic thin-film transistors with inert contact metals

Sarah Schols*, Lucas Van Willigenburg, Robert Müller, Dieter Bode, Maarten Debucquoy, Jan Genoe, Paul Heremans, Shaofeng Lu, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Thin film growth by high vacuum evaporation of the n-type organic semiconductor 5, 5‴-diperfluorohexylcarbonyl-2,2':5',2″:5″, 2‴-quaterthiophene (DFHCO-4T) on poly-(α-methylstyrene)-coated n++-Si/SiO2 substrates is investigated at various deposition fluxes and substrate temperatures. Film characterization by atomic force microscopy reveals typical Stransky-Krastanov growth. Transistors with Au source-drain top contacts and optimized DFHCO-4T deposition conditions attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100x lower for similar transistors with LiF/Al top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor injection properties resulting from a redox reaction between Al and DFHCO→4T.

Original languageEnglish (US)
Pages (from-to)79-84
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1154
DOIs
StatePublished - 2009
Event2009 MRS Spring Meeting: MRS Symposium B on Concepts in Molecular and Organic Electronics - San Francisco, CA, United States
Duration: Apr 13 2009Apr 17 2009

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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