High performance organic field-effect transistor with oxide/metal bilayer electrodes

Xinge Yu; Junsheng Yu; Wei Huang; Shijiao Han; Yadong Jiang

doi:10.1117/12.977848

High performance organic field-effect transistor with oxide/metal bilayer electrodes

Xinge Yu, Junsheng Yu^*, Wei Huang, Shijiao Han, Yadong Jiang

^*Corresponding author for this work

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO₃ between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO₃ interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO₃ interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices.

Original language	English (US)
Title of host publication	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
Subtitle of host publication	Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Volume	8419
DOIs	https://doi.org/10.1117/12.977848
State	Published - Dec 1 2012
Event	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy - Xiamen, China Duration: Apr 26 2012 → Apr 29 2012

Other

Other	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Country/Territory	China
City	Xiamen
Period	4/26/12 → 4/29/12

Keywords

Contact resistance
Injection barrier
MoO interlayer
Organic field-effect transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.977848

Cite this

Yu, X., Yu, J., Huang, W., Han, S., & Jiang, Y. (2012). High performance organic field-effect transistor with oxide/metal bilayer electrodes. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy (Vol. 8419). Article 84190E https://doi.org/10.1117/12.977848

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title = "High performance organic field-effect transistor with oxide/metal bilayer electrodes",

abstract = "Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices.",

keywords = "Contact resistance, Injection barrier, MoO interlayer, Organic field-effect transistors",

author = "Xinge Yu and Junsheng Yu and Wei Huang and Shijiao Han and Yadong Jiang",

year = "2012",

month = dec,

day = "1",

doi = "10.1117/12.977848",

language = "English (US)",

isbn = "9780819491015",

volume = "8419",

booktitle = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies",

note = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy ; Conference date: 26-04-2012 Through 29-04-2012",

}

Yu, X, Yu, J, Huang, W, Han, S & Jiang, Y 2012, High performance organic field-effect transistor with oxide/metal bilayer electrodes. in 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. vol. 8419, 84190E, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, Xiamen, China, 4/26/12. https://doi.org/10.1117/12.977848

High performance organic field-effect transistor with oxide/metal bilayer electrodes. / Yu, Xinge; Yu, Junsheng; Huang, Wei et al.
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. Vol. 8419 2012. 84190E.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High performance organic field-effect transistor with oxide/metal bilayer electrodes

AU - Yu, Xinge

AU - Yu, Junsheng

AU - Huang, Wei

AU - Han, Shijiao

AU - Jiang, Yadong

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices.

AB - Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices.

KW - Contact resistance

KW - Injection barrier

KW - MoO interlayer

KW - Organic field-effect transistors

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DO - 10.1117/12.977848

M3 - Conference contribution

AN - SCOPUS:84875544046

SN - 9780819491015

VL - 8419

BT - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies

T2 - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy

Y2 - 26 April 2012 through 29 April 2012

ER -

High performance organic field-effect transistor with oxide/metal bilayer electrodes

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Keywords

ASJC Scopus subject areas

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