High performance phase and amplitude modulators based on GaInAsP stepped quantum wells

H. Mohseni; H. An; Z. A. Shellenbarger; M. H. Kwakernaak; J. H. Abeles

doi:10.1117/12.547841

High performance phase and amplitude modulators based on GaInAsP stepped quantum wells

H. Mohseni^*, H. An, Z. A. Shellenbarger, M. H. Kwakernaak, J. H. Abeles

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm ^-1 in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.

Original language	English (US)
Pages (from-to)	64-68
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5435
DOIs	https://doi.org/10.1117/12.547841
State	Published - Dec 24 2004
Event	Enabling Photonic Technologies for Aerospace Applications VI - Orlando, FL, United States Duration: Apr 14 2004 → Apr 15 2004

Keywords

Compound semiconductors
Electrorefraction
Modulators
Optical modulators
Quantum wells
Stepped quantum wells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.547841

Cite this

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title = "High performance phase and amplitude modulators based on GaInAsP stepped quantum wells",

abstract = "Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm -1 in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.",

keywords = "Compound semiconductors, Electrorefraction, Modulators, Optical modulators, Quantum wells, Stepped quantum wells",

author = "H. Mohseni and H. An and Shellenbarger, {Z. A.} and Kwakernaak, {M. H.} and Abeles, {J. H.}",

year = "2004",

month = dec,

day = "24",

doi = "10.1117/12.547841",

language = "English (US)",

volume = "5435",

pages = "64--68",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Enabling Photonic Technologies for Aerospace Applications VI ; Conference date: 14-04-2004 Through 15-04-2004",

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TY - JOUR

T1 - High performance phase and amplitude modulators based on GaInAsP stepped quantum wells

AU - Mohseni, H.

AU - An, H.

AU - Shellenbarger, Z. A.

AU - Kwakernaak, M. H.

AU - Abeles, J. H.

PY - 2004/12/24

Y1 - 2004/12/24

N2 - Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm -1 in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.

AB - Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm -1 in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.

KW - Compound semiconductors

KW - Electrorefraction

KW - Modulators

KW - Optical modulators

KW - Quantum wells

KW - Stepped quantum wells

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DO - 10.1117/12.547841

M3 - Conference article

AN - SCOPUS:10444265975

SN - 0277-786X

VL - 5435

SP - 64

EP - 68

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Enabling Photonic Technologies for Aerospace Applications VI

Y2 - 14 April 2004 through 15 April 2004

ER -

High performance phase and amplitude modulators based on GaInAsP stepped quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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