High performance phase and amplitude modulators based on GaInAsP stepped quantum wells

H. Mohseni*, H. An, Z. A. Shellenbarger, M. H. Kwakernaak, J. H. Abeles

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm -1 in the 3SQW increased the modulator figure of merit by nearly 53 times, and decreased the power consumption by nearly one order of magnitude compared with a conventional RQW design.

Original languageEnglish (US)
Pages (from-to)64-68
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Dec 24 2004
EventEnabling Photonic Technologies for Aerospace Applications VI - Orlando, FL, United States
Duration: Apr 14 2004Apr 15 2004


  • Compound semiconductors
  • Electrorefraction
  • Modulators
  • Optical modulators
  • Quantum wells
  • Stepped quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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