High performance photodiodes based on InAs/lnAsSb type-ll superlattices for very long wavelength infrared detection

A. M. Hoang; G. Chen; R. Chevallier; A. Haddadi; M. Razeghi

doi:10.1063/1.4884947

High performance photodiodes based on InAs/lnAsSb type-ll superlattices for very long wavelength infrared detection

A. M. Hoang, G. Chen, R. Chevallier, A. Haddadi, M. Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Very long wavelength infrared photodetectors based on InAs/lnAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6μ m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 AAV. corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antirellective coating. With the dark current density of 0.7 A/cm², it provided a specific detectivity of 1.4 x 10¹⁰ Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

Original language	English (US)
Article number	251105
Journal	Applied Physics Letters
Volume	104
Issue number	25
DOIs	https://doi.org/10.1063/1.4884947
State	Published - Jun 23 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High performance photodiodes based on InAs/lnAsSb type-ll superlattices for very long wavelength infrared detection",

abstract = "Very long wavelength infrared photodetectors based on InAs/lnAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6μ m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 AAV. corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antirellective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 x 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.",

author = "Hoang, {A. M.} and G. Chen and R. Chevallier and A. Haddadi and M. Razeghi",

note = "Funding Information: The authors would like to acknowledge Walter P. Murphy fellowship, DARPA, Army Research Laboratory (ARL), Night Vision and Electronic Sensor Directorate (NVESD), Air Force Research Laboratory , and NASA for their support , interest and encouragement Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

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doi = "10.1063/1.4884947",

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T1 - High performance photodiodes based on InAs/lnAsSb type-ll superlattices for very long wavelength infrared detection

AU - Hoang, A. M.

AU - Chen, G.

AU - Chevallier, R.

AU - Haddadi, A.

AU - Razeghi, M.

N1 - Funding Information: The authors would like to acknowledge Walter P. Murphy fellowship, DARPA, Army Research Laboratory (ARL), Night Vision and Electronic Sensor Directorate (NVESD), Air Force Research Laboratory , and NASA for their support , interest and encouragement Publisher Copyright: © 2014 AIP Publishing LLC.

PY - 2014/6/23

Y1 - 2014/6/23

N2 - Very long wavelength infrared photodetectors based on InAs/lnAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6μ m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 AAV. corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antirellective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 x 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

AB - Very long wavelength infrared photodetectors based on InAs/lnAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6μ m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 AAV. corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antirellective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 x 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

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High performance photodiodes based on InAs/lnAsSb type-ll superlattices for very long wavelength infrared detection

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