High performance photodiodes based on InAs/lnAsSb type-ll superlattices for very long wavelength infrared detection

A. M. Hoang, G. Chen, R. Chevallier, A. Haddadi, M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Very long wavelength infrared photodetectors based on InAs/lnAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6μ m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 AAV. corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antirellective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 x 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

Original languageEnglish (US)
Article number251105
JournalApplied Physics Letters
Volume104
Issue number25
DOIs
StatePublished - Jun 23 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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