Abstract
Very long wavelength infrared photodetectors based on InAs/lnAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6μ m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 AAV. corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antirellective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 x 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.
Original language | English (US) |
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Article number | 251105 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 25 |
DOIs | |
State | Published - Jun 23 2014 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)