High Performance Plastic Transistors With Printed Polyaniline Electrodes

Michael Lefenfeld*, Graciela Blanchet, John A. Rogers

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


This article describes the properties of transistors that use organic semiconductors deposited on top of conducting polymer electrodes patterned by thermal transfer printing onto thin plastic sheets. The polymer, dinonylnaphthalene sulfonic acid doped polyaniline (DNNSA-PANI), contains several weight percent of single walled carbon nanotubes (SWNT) to improve its conductivity. Pentacene serves as the p-type organic semiconductor. The good electrical performance of these devices derives directly from the low resistance contacts between the printed DNNSA-PANI/SWNT source/drain electrodes and the pentacene. The measurements presented here quantify the behavior of these contacts and provide some morphological evidence for their low resistance. The excellent characteristics of the transistors and the operational flexibility of the thermal transfer printing technique that is used to pattern them represent results that may be an important step for the development of means to build realistic flexible electronic devices.

Original languageEnglish (US)
Pages (from-to)99-104
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
EventFlexible Electronics - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 25 2003

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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