High performance quantum cascade lasers at λ ∼ 6 μm

M. Razeghi*, S. Slivken, J. Yu, A. Evans, J. David

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

This talk will focus on the recent efforts at the Center for Quantum Devices to deliver a high average power quantum cascade laser source at λ ∼ 6μm. Strain-balancing is used to reduce leakage for these shorter wavelength quantum cascade lasers. Further, the effect of reducing the doping in the injector is explored relative to the threshold current density and maximum average output power. Lastly, to demonstrate more of the potential of these devices, epilayer down bonding is explored as a technique to significantly enhance device performance.

Original languageEnglish (US)
Pages (from-to)383-385
Number of pages3
JournalMicroelectronics Journal
Volume34
Issue number5-8
DOIs
StatePublished - May 2003

Keywords

  • Average power
  • Quantum cascade laser
  • Threshold current density

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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