High performance quantum cascade lasers grown by gas-source molecular beam epitaxy

M. Razeghi*, S. Slivken, A. Tahraoui, A. Matlis

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Recent improvements in quantum cascade laser technology have led to a number of very impressive results. This paper is a brief summary of the technological development and state-of-the-art performance of quantum cascade lasers produced at the Center for Quantum Devices. Laser design will be discussed, as well as experimental details of device fabrication. Room temperature QCL operation has been reported for lasers emitting between 5-11 μm, with 9-11 μm lasers operating up to 425 K. We also demonstrate record room temperature peak output powers at 9 and 11 μm (2.5 W and 1 W respectively) as well as record low 80 K threshold current densities (250 A/cm2) for some laser designs. Finally, some of the current limitations to laser efficiency are mentioned, as well as a means to combat them.

Original languageEnglish (US)
Pages (from-to)13-22
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4287
DOIs
StatePublished - Jan 1 2001
EventIn-Plane Semiconductor Lasers V - San Jose, CA, United States
Duration: Jan 22 2001Jan 23 2001

Keywords

  • Gas-source molecular beam epitaxy
  • High-power semiconductor laser
  • InP-based material
  • Intersubband transitions
  • Quantum cascade laser
  • Wavefunction engineering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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