High performance quantum dot-quantum well infrared focal plane arrays

S. Tsao*, A. Myzaferi, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Quantum dot (QD) devices are a promising technology for high operating temperature detectors. We have studied InAs QDs embedded in an InGaAs/InAlAs quantum well structure on InP substrate for middle wavelength infrared detectors and focal plane arrays (FPAs). This combined dot-well structure has weak dot confinement of carriers, and as a result, the device behavior differs significantly from that in more common dot systems with stronger confinement. We report on our studies of the energy levels in the QDWIP devices and on QD-based detectors operating at high temperature with D* over 1010 cmHz1/2/W at 150 K operating temperature and high quantum efficiency over 50%. FPAs have been demonstrated operating at up to 200 K. We also studied two methods of adapting the QDWIP device to better accommodate FPA readout circuit limitations.

Original languageEnglish (US)
Title of host publicationOptoelectronic Integrated Circuits XII
Volume7605
DOIs
StatePublished - May 3 2010
EventOptoelectronic Integrated Circuits XII - San Francisco, CA, United States
Duration: Jan 27 2010Jan 28 2010

Other

OtherOptoelectronic Integrated Circuits XII
CountryUnited States
CitySan Francisco, CA
Period1/27/101/28/10

Keywords

  • Focal plane array
  • Infrared
  • InP
  • MOCVD
  • Photodetector
  • Quantum dot

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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