High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

A. Haddadi; X. V. Suo; S. Adhikary; P. Dianat; R. Chevallier; A. M. Hoang; M. Razeghi

doi:10.1063/1.4932518

High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs_1-xSb_x/AlAs_1-xSb_x superlattices

A. Haddadi, X. V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, M. Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs_1-xSb_x/AlAs_1-xSb_x type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ∼1.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 285 Ω cm² and a dark current density of 9.6 × 10^-5 A/cm² under -50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 × 10¹⁰cm Hz^1/2/W. At 200 K, the photodiode exhibited a dark current density of 1.3 × 10^-8 A/cm² and a quantum efficiency of 36%, resulting in a detectivity of 5.66 × 10¹²cm Hz^1/2/W.

Original language	English (US)
Article number	141104
Journal	Applied Physics Letters
Volume	107
Issue number	14
DOIs	https://doi.org/10.1063/1.4932518
State	Published - Oct 5 2015

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{964e86014b994f0db46eaeafa0f9059d,

title = "High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices",

abstract = "A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ∼1.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 285 Ω cm2 and a dark current density of 9.6 × 10-5 A/cm2 under -50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 × 1010cm Hz1/2/W. At 200 K, the photodiode exhibited a dark current density of 1.3 × 10-8 A/cm2 and a quantum efficiency of 36%, resulting in a detectivity of 5.66 × 1012cm Hz1/2/W.",

author = "A. Haddadi and Suo, {X. V.} and S. Adhikary and P. Dianat and R. Chevallier and Hoang, {A. M.} and M. Razeghi",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = oct,

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doi = "10.1063/1.4932518",

language = "English (US)",

volume = "107",

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AU - Haddadi, A.

AU - Suo, X. V.

AU - Adhikary, S.

AU - Dianat, P.

AU - Chevallier, R.

AU - Hoang, A. M.

AU - Razeghi, M.

PY - 2015/10/5

Y1 - 2015/10/5

N2 - A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ∼1.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 285 Ω cm2 and a dark current density of 9.6 × 10-5 A/cm2 under -50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 × 1010cm Hz1/2/W. At 200 K, the photodiode exhibited a dark current density of 1.3 × 10-8 A/cm2 and a quantum efficiency of 36%, resulting in a detectivity of 5.66 × 1012cm Hz1/2/W.

AB - A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ∼1.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 285 Ω cm2 and a dark current density of 9.6 × 10-5 A/cm2 under -50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 × 1010cm Hz1/2/W. At 200 K, the photodiode exhibited a dark current density of 1.3 × 10-8 A/cm2 and a quantum efficiency of 36%, resulting in a detectivity of 5.66 × 1012cm Hz1/2/W.

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High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs_1-xSb_x/AlAs_1-xSb_x superlattices

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