High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

Manijeh Razeghi, Abbas Haddadi, X. V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, Arash Dehzangi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ∼1.8mm. For-50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLII
EditorsPaul R. Norton, Charles M. Hanson, Gabor F. Fulop, Bjorn F. Andresen
ISBN (Electronic)9781510600607
StatePublished - Jan 1 2016
EventInfrared Technology and Applications XLII - Baltimore, United States
Duration: Apr 18 2016Apr 21 2016


OtherInfrared Technology and Applications XLII
CountryUnited States


  • InAs/GaSb/AlSb type-II superlattice
  • high operating temperature infrared photodetector
  • infrared imaging
  • photodetector
  • short-wavelength infrared

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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