@inproceedings{2bc60bcae1164f8888d10cd38b5d7797,
title = "High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices",
abstract = "We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ∼1.8mm. For-50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.",
keywords = "InAs/GaSb/AlSb type-II superlattice, high operating temperature infrared photodetector, infrared imaging, photodetector, short-wavelength infrared",
author = "M. Razeghi and A. Haddadi and Suo, {X. V.} and S. Adhikary and P. Dianat and R. Chevallier and Hoang, {A. M.} and A. Dehzangi",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Infrared Technology and Applications XLII ; Conference date: 18-04-2016 Through 21-04-2016",
year = "2016",
doi = "10.1117/12.2228611",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Norton, {Paul R.} and Hanson, {Charles M.} and Fulop, {Gabor F.} and Andresen, {Bjorn F.}",
booktitle = "Infrared Technology and Applications XLII",
}