High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

Manijeh Razeghi; Abbas Haddadi; X. V. Suo; S. Adhikary; P. Dianat; R. Chevallier; A. M. Hoang; Arash Dehzangi

doi:10.1117/12.2228611

High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

Manijeh Razeghi, Abbas Haddadi, X. V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, Arash Dehzangi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs_1-xSb_x/AlAs_1-xSb_x on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ∼1.8mm. For-50mV applied bias at 300 K the photodetector has dark current density of 9.6x10^-5 A/cm² and RxA of 285 Ω•cm², and it revealed a detectivity of 6.45x10¹⁰ cm•Hz^1/2/W. Dark current density reached to 1.3x10^-8 A/cm² at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x10¹² cm•Hz^1/2/W.

Original language	English (US)
Title of host publication	Infrared Technology and Applications XLII
Editors	Paul R. Norton, Charles M. Hanson, Gabor F. Fulop, Bjorn F. Andresen
Publisher	SPIE
Volume	9819
ISBN (Electronic)	9781510600607
DOIs	https://doi.org/10.1117/12.2228611
State	Published - Jan 1 2016
Event	Infrared Technology and Applications XLII - Baltimore, United States Duration: Apr 18 2016 → Apr 21 2016

Other

Other	Infrared Technology and Applications XLII
Country	United States
City	Baltimore
Period	4/18/16 → 4/21/16

Keywords

InAs/GaSb/AlSb type-II superlattice
high operating temperature infrared photodetector
infrared imaging
photodetector
short-wavelength infrared

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Razeghi, M., Haddadi, A., Suo, X. V., Adhikary, S., Dianat, P., Chevallier, R., Hoang, A. M., & Dehzangi, A. (2016). High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices. In P. R. Norton, C. M. Hanson, G. F. Fulop, & B. F. Andresen (Eds.), Infrared Technology and Applications XLII (Vol. 9819). [98190A] SPIE. https://doi.org/10.1117/12.2228611

Razeghi, Manijeh ; Haddadi, Abbas ; Suo, X. V. ; Adhikary, S. ; Dianat, P. ; Chevallier, R. ; Hoang, A. M. ; Dehzangi, Arash. / High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices. Infrared Technology and Applications XLII. editor / Paul R. Norton ; Charles M. Hanson ; Gabor F. Fulop ; Bjorn F. Andresen. Vol. 9819 SPIE, 2016.

@inproceedings{2bc60bcae1164f8888d10cd38b5d7797,

title = "High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices",

abstract = "We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ∼1.8mm. For-50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.",

keywords = "InAs/GaSb/AlSb type-II superlattice, high operating temperature infrared photodetector, infrared imaging, photodetector, short-wavelength infrared",

author = "Manijeh Razeghi and Abbas Haddadi and Suo, {X. V.} and S. Adhikary and P. Dianat and R. Chevallier and Hoang, {A. M.} and Arash Dehzangi",

year = "2016",

month = jan,

day = "1",

doi = "10.1117/12.2228611",

language = "English (US)",

volume = "9819",

editor = "Norton, {Paul R.} and Hanson, {Charles M.} and Fulop, {Gabor F.} and Andresen, {Bjorn F.}",

booktitle = "Infrared Technology and Applications XLII",

publisher = "SPIE",

note = "Infrared Technology and Applications XLII ; Conference date: 18-04-2016 Through 21-04-2016",

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Razeghi, M, Haddadi, A, Suo, XV, Adhikary, S, Dianat, P, Chevallier, R, Hoang, AM & Dehzangi, A 2016, High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices. in PR Norton, CM Hanson, GF Fulop & BF Andresen (eds), Infrared Technology and Applications XLII. vol. 9819, 98190A, SPIE, Infrared Technology and Applications XLII, Baltimore, United States, 4/18/16. https://doi.org/10.1117/12.2228611

High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices. / Razeghi, Manijeh; Haddadi, Abbas; Suo, X. V.; Adhikary, S.; Dianat, P.; Chevallier, R.; Hoang, A. M.; Dehzangi, Arash.

Infrared Technology and Applications XLII. ed. / Paul R. Norton; Charles M. Hanson; Gabor F. Fulop; Bjorn F. Andresen. Vol. 9819 SPIE, 2016. 98190A.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

AU - Razeghi, Manijeh

AU - Haddadi, Abbas

AU - Suo, X. V.

AU - Adhikary, S.

AU - Dianat, P.

AU - Chevallier, R.

AU - Hoang, A. M.

AU - Dehzangi, Arash

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ∼1.8mm. For-50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.

AB - We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ∼1.8mm. For-50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.

KW - InAs/GaSb/AlSb type-II superlattice

KW - high operating temperature infrared photodetector

KW - infrared imaging

KW - photodetector

KW - short-wavelength infrared

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DO - 10.1117/12.2228611

M3 - Conference contribution

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BT - Infrared Technology and Applications XLII

A2 - Norton, Paul R.

A2 - Hanson, Charles M.

A2 - Fulop, Gabor F.

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Y2 - 18 April 2016 through 21 April 2016

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