High-performance solution-deposited n-channel organic transistors and their complementary circuits

Byungwook Yoo; Brooks A. Jones; Debarshi Basu; Daniel Fine; Taeho Jung; Siddharth Mohapatra; Antonio Facchetti; Klaus Dimmler; Michael R. Wasielewski; Tobin J. Marks; Ananth Dodabalapur

doi:10.1002/adma.200700064

High-performance solution-deposited n-channel organic transistors and their complementary circuits

Byungwook Yoo^*, Brooks A. Jones, Debarshi Basu, Daniel Fine, Taeho Jung, Siddharth Mohapatra, Antonio Facchetti, Klaus Dimmler, Michael R. Wasielewski, Tobin J. Marks, Ananth Dodabalapur

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

The fabrication of high-performance solution-deposited n-channel organic transistors and their complementary circuits from a PDI-8CN₂ solution with micro-injector patterning technique were reported. The scans of vapor- and solution-deposited films indicate a significantly textured thin film microstructure where the molecular long axes are tilted at 40°. Higher annealing temperatures are found to eliminate residual solvent, oxygen, and moisture from the films and are favorable for reconstruction to more ordered film micro- and grain structures. The complementary circuits consisting of p- and n-channel transistors are ideal configuration for organic semiconductors, offering low static power dissipation. The operating frequency of the ring oscillator of a single transistor is achieved in vacuum and in ambient atmosphere at room temperature.

Original language	English (US)
Pages (from-to)	4028-4032
Number of pages	5
Journal	Advanced Materials
Volume	19
Issue number	22
DOIs	https://doi.org/10.1002/adma.200700064
State	Published - Nov 19 2007

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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abstract = "The fabrication of high-performance solution-deposited n-channel organic transistors and their complementary circuits from a PDI-8CN2 solution with micro-injector patterning technique were reported. The scans of vapor- and solution-deposited films indicate a significantly textured thin film microstructure where the molecular long axes are tilted at 40°. Higher annealing temperatures are found to eliminate residual solvent, oxygen, and moisture from the films and are favorable for reconstruction to more ordered film micro- and grain structures. The complementary circuits consisting of p- and n-channel transistors are ideal configuration for organic semiconductors, offering low static power dissipation. The operating frequency of the ring oscillator of a single transistor is achieved in vacuum and in ambient atmosphere at room temperature.",

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AU - Yoo, Byungwook

AU - Jones, Brooks A.

AU - Basu, Debarshi

AU - Fine, Daniel

AU - Jung, Taeho

AU - Mohapatra, Siddharth

AU - Facchetti, Antonio

AU - Dimmler, Klaus

AU - Wasielewski, Michael R.

AU - Marks, Tobin J.

AU - Dodabalapur, Ananth

PY - 2007/11/19

Y1 - 2007/11/19

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High-performance solution-deposited n-channel organic transistors and their complementary circuits

Abstract

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