High-performance solution-deposited n-channel organic transistors and their complementary circuits

Byungwook Yoo*, Brooks A. Jones, Debarshi Basu, Daniel Fine, Taeho Jung, Siddharth Mohapatra, Antonio Facchetti, Klaus Dimmler, Michael R. Wasielewski, Tobin J. Marks, Ananth Dodabalapur

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

The fabrication of high-performance solution-deposited n-channel organic transistors and their complementary circuits from a PDI-8CN2 solution with micro-injector patterning technique were reported. The scans of vapor- and solution-deposited films indicate a significantly textured thin film microstructure where the molecular long axes are tilted at 40°. Higher annealing temperatures are found to eliminate residual solvent, oxygen, and moisture from the films and are favorable for reconstruction to more ordered film micro- and grain structures. The complementary circuits consisting of p- and n-channel transistors are ideal configuration for organic semiconductors, offering low static power dissipation. The operating frequency of the ring oscillator of a single transistor is achieved in vacuum and in ambient atmosphere at room temperature.

Original languageEnglish (US)
Pages (from-to)4028-4032
Number of pages5
JournalAdvanced Materials
Volume19
Issue number22
DOIs
StatePublished - Nov 19 2007

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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